10kW TWT Transition to GaN IRE

Abstract

The purpose of this Internal Rapid Experimentation (IRE) is to develop a Gallium Nitride (GaN) replacement for 10kW Traveling Wave Tube (TWT). A phased approach will be used to develop a solid state replacement for the TWT. Phase I covered by this IRE, was to do market research on commercially available GaN transistors as a substitute for traveling wave tubes in high power radar and Electronic Warfare (EW) applications. GaN transistors, using evaluation boards, were tested and analyzed, supplementing and compared against the data found on the vendor s data sheet. Using vendor models of selected transistors, an initial design approach and architecture was developed using Keysight ADS software. Simulations were run for comparison against vendor data sheets and the test data collected.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 2015
Accession Number
ADA616068

Entities

People

  • Jeremiah J. Robbennolt
  • Mark Schaefer
  • Rob Bechtel

Organizations

  • Naval Surface Warfare Center

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Electronic Warfare
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Circuit Boards
  • Compound Semiconductors
  • Electronic Warfare
  • Elements
  • Gallium Nitrides
  • Market Research
  • Measurement
  • Monolithic Microwave Integrated Circuits
  • Radio Frequency Amplifiers
  • Semiconductors
  • Silicon Carbide
  • Simulations
  • Test And Evaluation
  • Test Equipment
  • Transducers
  • Traveling Wave Tubes
  • Traveling Waves

Readers

  • Business Analytics
  • Electronics Engineering
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics