Synthesis and Characterization of Hexagonal Boron Nitride (h- BN) Films
Abstract
The large-area growth of hexagonal boron nitride (h-BN) with controllable thickness (number of layers) and down to the 1-2 layers was demonstrated. In addition to the standard characterization tools used for h-BN films, such as, scanning and transmission electron microscopies (SEM and TEM), Raman spectroscopy and mapping and x-ray photoelectron spectroscopy (XPS), other less common methodologies were used as well. For example; low energy electron microscopy and diffraction was found to provide large-area and accurate number of layers; Time of flight secondary ion mass spectroscopy (TOF-SIMS) provided with a 3D mapping of elements and photoluminescence (PL) measurements were detected even from a 1-2 layers on top of a thin graphite layer, and thus, proving the presence of the h-BN phase on top of the graphene/graphite when being very challenging to do so by means of other methodologies. These results allowed us to study in better detail the growth mechanism and few manuscripts are in preparation. We believe our work will lead to a better understanding of the h-BN growth process and thus pave the way to a wide variety of applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 09, 2014
- Accession Number
- ADA616097
Entities
People
- Ariel Ismach
- Harry Chao
- Rodney S. Ruoff
- Sanjay Banerjee
Organizations
- University of Texas at Austin