Gate-dependent Pseudospin Mixing in Graphene/boron Nitride Moire Superlattices

Abstract

Electrons in graphene are described by relativistic Dirac Weyl spinors with a two-component pseudospin. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone, nomalous quantum Hall effect, and Klein tunnelling, in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sublattices at the atomic level. Graphene/boron nitride moir superlattices, where a fast sublattice oscillation due to boron and nitrogen atoms is superimposed on the slow moire period, provides an attractive approach to engineer the electron pseudospin in graphene.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 31, 2014
Accession Number
ADA616129

Entities

People

  • Chenhao Jin
  • Deyi Fu
  • Hans A. Bechtel
  • Jason Horng
  • Junqiao Wu
  • Long Ju
  • Michael C Martin
  • Wei Yang
  • Xiaobo Lu
  • Zhiwen Shi

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Spectra
  • Brillouin Zones
  • Ceramic Materials
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Graphene
  • Light Sources
  • Materials
  • Materials Laboratories
  • Materials Science
  • Optical Absorption
  • Spectra
  • Spectroscopy
  • Superlattices
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Graph Algorithms and Convex Optimization.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots