Ultrafast Silicon-based Modulators using Optical Switching of Vanadium Dioxide
Abstract
In this report, we describe our accomplishments during this project in four areas: (1) optical switching of Si-VO2 ring resonators and Mach-Zehnder interferometers; (2) nanosecond all-optical switching of Si-VO2 absorption modulators and ring resonators; (3) nanosecond electrical switching of Si-VO2 absorption modulators; and (4) designs for fiber-to-chip couplers and alternative modulator geometries. The operation of the Si-VO2 modulator is initially demonstrated by using photothermal heating to induce the VO2 semiconductor-to-metal phase transition and modulate the transmitted optical signal intensity. Ultrafast, all-optical switching at the nanosecond time scale is then demonstrated by using a pulsed nanosecond laser for excitation. Ultrafast electro-optic switching is also demonstrated at the nanosecond time scale using a geometry that would allow for straightforward integration with existing optical interconnect technologies. Finally, extensions to the Si-VO2 modulator are presented for increased efficiency of source-to-modulator coupling using a transformation optics design approach and increased quality factor-to-mode volume ratio using a slotted nanocavity design.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 04, 2014
- Accession Number
- ADA616208
Entities
People
- Richard F. Haglund Jr.
- Sharon M Weiss
Organizations
- Vanderbilt University