Superlattice Intermediate Band Solar Cell on Gallium Arsenide

Abstract

The design and practical viability of an intermediate band solar cell incorporating low dimensional structures made with dilute nitrogen alloys of III-V semiconductors is investigated theoretically and experimentally. Modeling of optical and electronic properties of the proposed materials and device is undertaken. The study suggests potential for this new class of single junction devices to yield efficiencies and radiation tolerance comparable or exceeding those of existing multi-junction devices.

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Document Details

Document Type
Technical Report
Publication Date
Feb 09, 2015
Accession Number
ADA616270

Entities

People

  • Alexandre Freundlich

Organizations

  • University of Houston

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Air Force Research Laboratories
  • Band Gaps
  • Band Structures
  • Cell Physiological Processes
  • Compound Semiconductors
  • Conduction Bands
  • Crystal Lattices
  • Energy Bands
  • Gallium Arsenides
  • Materials
  • Optoelectronic Devices
  • Radiation
  • Refractive Index
  • Semiconductors
  • Solar Cells
  • Spacecraft

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics