Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

Abstract

A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2015
Accession Number
ADA616757

Entities

People

  • Gregory K. Ovrebo

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Aluminum Nitrides
  • Bipolar Junction Transistors
  • Circuit Boards
  • Electronics
  • Impedance
  • Materials
  • Military Research
  • Power Levels
  • Resistance
  • Simulations
  • Specifications
  • Surface Temperature
  • Switching
  • Thermal Resistance
  • Three Dimensional
  • Transistors

Fields of Study

  • Engineering
  • Physics

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering

Technology Areas

  • Microelectronics