Oxide Based Transistor for Flexible Displays

Abstract

The team of NC A&T and RTI, International investigated In free GaSnZnO (GSZO) material system, as the active channel in thin film transistors (TFTs) for next generation display technologies. A detailed and comprehensive study was carried out to ascertain the processproperty relationships of radio frequency (RF) sputtered GSZO films as a function of number of deposition parameters, including deposition temperature, process pressure and annealing temperature, duration and ambient using variety of characterization techniques for chemical and microstructural properties, electrical and opto-electrical properties. The impact of process conditions on the device performance was also subject of detailed study.

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Document Details

Document Type
Technical Report
Publication Date
Sep 15, 2014
Accession Number
ADA617273

Entities

People

  • Jay Lewis
  • Shanthi Iyer

Organizations

  • North Carolina Agricultural and Technical State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Computers
  • Dielectrics
  • Electrical Properties
  • Energy Bands
  • Fabrication
  • Field Effect Transistors
  • Materials
  • Measurement
  • Metal Oxide Semiconductors
  • Optical Properties
  • Semiconductors
  • Students
  • Surface Roughness
  • Thin Film Transistors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.
  • Reinforced Composite Materials