Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

Abstract

This technical report examines sheet-resistance and Hall-effect results when using a Lehighton Electronics Inc. Model 1605B contactless mobility system. This report gives results on multiple samples including 4-inch, n-type Si; multiple AlGaN/GaN High Electron Mobility Transistor (HEMT) structures grown on SiC substrates; and an unintentionally doped (UID) GaN on sapphire template.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2015
Accession Number
ADA618164

Entities

People

  • Danh Nguyen
  • Randy P. Tompkins

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Compound Semiconductors
  • Electrical Properties
  • Electron Mobility
  • Electronics
  • Electrons
  • Hall Effect
  • High Electron Mobility Transistors
  • Magnetic Fields
  • Materials
  • Measurement
  • Military Research
  • Mobility
  • Resistance
  • Semiconductors
  • Silicon Carbide
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics