Functionalizing the GaN(0001)-(1 x 1) Surface. I. The Chemisorption of Aniline

Abstract

Chemisorption of aniline (C6H5NH2) on the GaN(0001)-(1x1) Ga-polar surface has been studied using mainly Xray-excited Auger electron, electron energy loss and ultraviolet photoemission spectroscopies (XAES, ELS and UPS respectively). The XAES data show adsorption near room temperature with a total sticking probability of ~0.05 and a saturation coverage of ~0.28 phenyl rings per surface lattice site. The ELS data show removal of the characteristic surface-state band centered at ~3.4 eV and the appearance of a pi to pi* loss at 6.5 eV due to C=C bonds. In contrast benzene (C6H6) does not chemisorb under these conditions. The UPS data, which have been analyzed with the aid of density functional theory molecular orbital calculations, indicate that adsorption occurs with a phenyl-NH group forming a Ga-N-Ga bridge. Adsorption causes a decrease in electron affinity (delta chi is approximately -0.55 eV) due to a surface dipole layer, and measurement of delta chi and of changes in band bending have been used to construct a partial energy level diagram for the aniline-covered surface.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2001
Accession Number
ADA618228

Entities

People

  • Victor M. Bermudez

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Crystal Lattices
  • Density Functional Theory
  • Electron Energy
  • Electron Spectroscopy
  • Electrons
  • Emission
  • Energy Levels
  • Materials
  • Photochemical Reactions
  • Photoelectric Emission
  • Photoelectrons
  • Scattering
  • Spectra
  • Spectroscopy

Readers

  • Materials Science and Engineering.
  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Space