Quantitative Analysis of Strain Distribution in InAs/InAs1-xSbx Superlattices (Postprint)

Abstract

Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1-xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface. The results signify an effective reduction in the InAs layer thickness due to the anion (As-Sb) exchange process at the InAs-on-InAsSb interface.

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Document Details

Document Type
Technical Report
Publication Date
Aug 08, 2013
Accession Number
ADA620896

Entities

People

  • Elizabeth H. Steenbergen
  • Gail J. Brown
  • K. Mahalingam
  • Yong-hang Zhang

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Band Structures
  • Computer Programs
  • Crystal Lattices
  • Electron Microscopy
  • Electrons
  • Engineering
  • Governments
  • Materials
  • Microscopy
  • Military Research
  • Substrates
  • Superlattices
  • Thickness
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics