Low-temperature Spin Spray Deposited Ferrite/piezoelectric Thin Film Magnetoelectric Heterostructures with Strong Magnetoelectric Coupling
Abstract
We report low-temperature spin spray deposited Fe3O4/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature ([600 C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O4/ZnO ME heterostructures have much lower deposition temperature (less than 100 C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 08, 2014
- Accession Number
- ADA621122
Entities
People
- Haibo Lin
- J.W. Lou
- Min Li
- O. Obi
- S. Beguhn
- S. Rand
- T. X. Nan
- Xiaoxuan Yang
- Yifeng Gao
- Zheyu Zhou
Organizations
- University of Florida