Coupling Graphene Sheets with Magnetic Nanoparticles for Energy Storage and Microelectronics

Abstract

Low voltage self-assembled monolayer field-effect transistors (SAMFETs) that operate under an applied bias of less than -3 V and a high hole-mobility of 10-2 cm2 V-1 s-1 are reported. A self-assembled monolayer (SAM) with a quaterthiophene semiconducting core and a phosphonic acid binding group is used to fabricate SAMFETs on both high- voltage (AlOx/300 nm SiO2) and low-voltage (HfO2) dielectric platforms. High performance is achieved through the enhanced SAM packing density via a heated assembly process and through the improved electrical contact between SAM semiconductor and metal electrodes. Enhanced electrical contact is obtained by utilizing a functional methyl-thio head group combined with thermal annealing post gold source/drain electrode deposition to facilitate the interaction between SAM and electrode. Furthermore, this SAMFET platform will be utilized as a monolayer memory transistor that has a charge trapping layer comprised of an interlayered magnetic nanoparticles and graphene oxide.

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Document Details

Document Type
Technical Report
Publication Date
Aug 13, 2015
Accession Number
ADA621194

Entities

People

  • Alex K. Jen
  • Andre-jean Attias
  • Kwang-sup Lee

Organizations

  • University of Washington

Tags

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemistry
  • Crystal Lattices
  • Energy Storage
  • Field Effect Transistors
  • Iron Oxides
  • Magnetic Nanoparticles
  • Materials
  • Materials Processing
  • Materials Science
  • Metal Oxide Nanoparticles
  • Nanoparticles
  • Nanotechnology
  • Self Assembled Monolayers
  • Self Assembly
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Biotechnology
  • Microelectronics
  • Microelectronics - Graphene