Heterointegration of Dissimilar Materials
Abstract
The integration scheme for compound semiconductors, functional oxides and silicon has been developed using molecular beam epitaxy with the oxide as a buffer layer on silicon substrates. This scheme will enable multifunctional oxides to be integrated with Si based logic and high speed optoelectronics afforded by III-V compound semiconductors. Various processes were developed whereby functional oxides were epitaxially deposited onto both silicon and compound semiconductor substrates. The oxide/semiconductor interface was studied in an effort to understand the bonding chemistry and the energetics to develop growth processes for 2-dimensional growth of compound semiconductors. Using a combination of high resolution transmission electron microscopy, in-situ XPS and density functional calculation a model of the bonding between the atoms at the SrTiO3/GaAs interface emerge. The relative stability of a number of interfacial structures was compared using the Gibbs free energy and for thin oxide layers, the most energetically stable structure was determined to be As-Sr interface with Sr atoms coming from an oxygen-depleted SrO layer. Using 3 terminations of the oxide surface, compound semiconductor layers were deposited by MBE.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 28, 2015
- Accession Number
- ADA621656
Entities
People
- Byounghak Lee
- Ravi Droopad
Organizations
- Texas State University