High Energy Effects on Thermoelectric and Optical Properties of Si/Si+Sb Nanolayered Thin Films

Abstract

We have prepared thermoelectric devices from alternating layers of Si/Si+Sb superlattice films using ion beam assisted deposition (IBAD). In order to determine the stoichiometry of the elements and the thickness of the grown multi-layer film, Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used. SEM and EDS have been used to analyze the surface and composition of the thin films. The 5 MeV Si ion bombardments have been performed using the AAMU Pelletron ion beam accelerator, to make quantum clusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and increase the cross plane electrical conductivity to increase the figure of merit. Some optical instrumentations have been used addition to RBS and SEM.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2013
Accession Number
ADA621741

Entities

People

  • C. Muntele
  • E. Gulduren
  • J. Cole Smith
  • J. Lessiter
  • M. A. Alim
  • R. B. Johnson
  • Richard Parker
  • S. Budak
  • T. Colon

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Spectra
  • Conductivity
  • Deposition (Materials Processing)
  • Electrical Conductivity
  • Electrical Engineering
  • Figure Of Merit
  • Films
  • High Energy
  • Ion Beams
  • Ion Bombardment
  • Ions
  • Materials
  • Military Research
  • Optical Absorption
  • Optical Properties
  • Thermal Conductivity
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Solar Photovoltaics and Thermoelectric Devices.
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing