Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

Abstract

To unambiguously distinguish lasing from super luminescence, key elements of lasing such as longitudinal cavity modes with narrow line-width, polarized emission, and elliptically shaped far-field pattern, need to be demonstrated at the same time. Here, we show transverse electric polarized lasing at 280.8 nm and 263.9 nm for AlGaN based multi-quantum-wells and double heterojunction structures fabricated on single crystalline AlN substrates. An elliptically shaped far-field pattern was recorded when pumped above threshold. With cavities shorter than 200 micrometers, well-defined, equally spaced longitudinal modes with line widths as narrow as 0.014 nm were observed. The low threshold pumping density of 84kW/cm2 suggests that the electrically pumped sub-300 nm ultraviolet laser diodes are imminent.

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Document Details

Document Type
Technical Report
Publication Date
Apr 29, 2013
Accession Number
ADA621905

Entities

People

  • Baxter Moody
  • Jinqiao Xie
  • Lindsay Hussey
  • Michael Gerhold
  • Ramón Collazo
  • Raoul Schlesser
  • Ronny Kirste
  • Seiji Mita
  • Wei Guo
  • Zachary Bryan

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Far Field
  • Heterojunctions
  • High Resolution
  • Laser Beams
  • Laser Diodes
  • Lasers
  • Materials
  • Materials Science
  • Measurement
  • North Carolina
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Ultraviolet Lasers

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Quantum Computing
  • Space