Polarity Control and Growth of Lateral Polarity Structures in AlN
Abstract
The control of the polarity of metalorganic chemical vapor deposition grown AlN on sapphire is demonstrated. Al-polar and N-polar AlN is grown side-by-side yielding a lateral polarity structure. Scanning electron microscopy measurements reveal a smooth surface for the Al-polar and a relatively rough surface for the N-polar AlN domains. Transmission electron microscopy shows mixed edge-screw type dislocations with polarity-dependent dislocation bending. Raman spectroscopy reveals compressively strained Al-polar and relaxed N-polar domains. The near band edge luminescence consists of free and bound excitons which are broadened for the Al-polar AlN. Relaxation, better optical quality, and dislocation bending in the N-polar domains are explained by the columnar growth mode.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 10, 2013
- Accession Number
- ADA621907
Entities
People
- Isaac Bryan
- James Tweedie
- Jinqiao Xie
- Lindsay Hussey
- Marc P. Hoffmann
- Michael Gerhold
- Ronny Kirste
- Seiji Mita
- Wei Guo
- Zachary Bryan
Organizations
- North Carolina State University