Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures

Abstract

A novel technique is used to determine the minority carrier lifetimes, interface recombination velocity, and radiative recombination constant from time-resolved photoluminescence measurements on a set of 3 molecular beam epitaxy (MBE)-grown gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs) double heterostructures (DHs) and published theory. This technique is used to determine that a distributed Bragg reflector between the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth parameters.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2015
Accession Number
ADA622212

Entities

People

  • Blair Connelly
  • Brenda Van Mil
  • Harry Hier
  • Patrick A. Folkes
  • W. Beck

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aluminum
  • Detectors
  • Distributed Bragg Reflectors
  • Elements
  • Gallium
  • Gallium Arsenides
  • Heterojunctions
  • Measurement
  • Military Research
  • Minority Groups
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Photoluminescence
  • Reflectors
  • Semiconductors
  • Substrates

Fields of Study

  • Materials science

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics