High K Oxide Insulated Gate Group III Nitride-Based FETs

Abstract

The impact of process conditions on the physical and electrical properties of high-k dielectric oxides on gallium nitride were explored. The efficacies of several cleaning procedures prior to oxide deposition by atomic layer deposition were examined. Overall, the best treatments were those that removed surface carbon with minimal surface roughening. Parameters examined included the oxide composition (AI203, Ti02, and Ga203), the gallium nitride crystallographic orientation (c- and m-plane), and its crystal polarity (Ga- anc N-polar).

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Document Details

Document Type
Technical Report
Publication Date
Mar 21, 2014
Accession Number
ADA622706

Entities

People

  • James H Edgar

Organizations

  • Kansas State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Engineering
  • Compound Semiconductors
  • Dielectric Permittivity
  • Electrical Properties
  • Electron Mobility
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Elements
  • Gallium
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Metal Oxide Semiconductors
  • Metals
  • Nitrides
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene