Control of Interfacial Phenomena in Artificial Oxide Heterostructures
Abstract
Research has focused on discovering new oxide materials systems with novel properties and demonstrating their potential for high performance electronic applications. We have successfully developed materials with novel interfacial phenomena for defense applications in oxides and their heterostructures. Moreover, we have extended our research to the interfaces of complex oxides and transition metal chalcogenides with novel emergent electronic phases. Our achievements include the discovery of a new conducting channel between two oxides, KTaO3 and LaTiO3, with the highest room temperature electron mobility reported so far for oxide interfaces. We have also explored how to control of the properties of complex oxides and their heterostructures using the field effect to control superconductivity, magnetism, and metal--insulator transitions. We also identify the existence of double TiO2 layers at the surface of SrTiO3 in the recently discovered monolayer high temperature superconductor FeSe/SrTiO3. Theoretical studies show that the double TiO2 layers play a crucial role in determining the superconducting states of monolayer FeSe/SrTiO3.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2015
- Accession Number
- ADA622722
Entities
People
- Charles Ahn
Organizations
- Yale University