N-Face GaN Electronics for Heteroepitaxial and Bonded Structures

Abstract

Wafer-bonded current aperture vertical transistors, BAVETs can obtain high frequency switching and breakdown. Transistor functionality has been obtained for such devices, but challenges such as high saturation voltages, on-resistance and low channel breakdown have limited performance. These performance anomalies may arise from the trap behavior of the waferbonded interface (WBI). When passivating traps at the WBI, anomalies in a BAVET were eliminated. Its saturation voltage and drain resistance were lowered and critical field to impact-ionization was made higher through the optimization of the Npolar InGaN interlayer thickness and the utilization of the p-type III-As gate heterobarrier.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 27, 2015
Accession Number
ADA622743

Entities

People

  • Umesh Mishra

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Electron Mobility
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Geometry
  • Heterojunction Bipolar Transistors
  • High Electron Mobility Transistors
  • Modules (Electronics)
  • Physical Properties
  • Power Electronics
  • Semiconductors
  • Thickness
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene