Structural and Optical Characteristics of Metamorphic Bulk InAsSb

Abstract

Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% and layer thicknesses up to 3 micro m were grown by molecular beam epitaxy. The photoluminescence (PL) peak energy as low as 0.10 eV was demonstrated at T = 77 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures from T = 80 to 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2014
Accession Number
ADA622904

Entities

People

  • Ding Wang
  • Dmitry Donetsky
  • G. Kipshidze
  • Gregory Belenky
  • L. Shterengas
  • Stefan P. Svensson
  • Wendy L. Sarney
  • Youxi Lin

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Bulk Materials
  • Crystal Lattices
  • Detection
  • Detectors
  • Efficiency
  • Electron Diffraction
  • Energy Gaps
  • Engineering
  • Infrared Detectors
  • Long-Wavelength Infrared Radiation
  • Materials
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Detection
  • Quantum Efficiency

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing