A Calibration Method for Group V Fluxes and Impact of V/III Flux Ratio on the Growth of InAs/InAsSb Type-II Superlattices by Molecular Beam Epitaxy

Abstract

A calibration method for group V fluxes is demonstrated for the growth of InAsxSB1-x alloys and strain-balanced InAs/InAsxSB1-x superlattices on GaSB substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 deg C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 ;ead to Sb mole fractions randing from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low temperature emission wavelengths ranging from 3.6 to 7.1 micro m.

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Document Details

Document Type
Technical Report
Publication Date
Jan 16, 2013
Accession Number
ADA622916

Entities

People

  • Ding Ding
  • Elizabeth H. Steenbergen
  • Hua Li
  • Jin Fan
  • Oray O. Cellek
  • Qiang Zhang
  • S. Liu
  • Xiao-Meng Shen
  • Zhao-yu He
  • Zhiyuan Lin

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Band Gaps
  • Calibration
  • Crystal Growth
  • Crystal Lattices
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • High Resolution
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Optoelectronic Devices
  • Semiconductor Lasers
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics