Defect Related Dark Currents in III-V MWIR nBn Detectors
Abstract
The effect of defects on the dark current characteristics of MWIR, III-V nBn detectors has been studied. Two different types of defects are compared, those produced by lattice mismatch and by proton irradiation. It is shown that the introduction of defects always elevates dark currents; however the effect on dark current is different for nBn detectors and conventional photodiodes. The dark currents of nBn detectors are found to be more tolerant of defects compared to pn-junction based devices. Defects more weakly increase dark currents, and cooling reduces the defectproduced dark currents more rapidly in nBn detectors than in conventional photodiodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2014
- Accession Number
- ADA623093
Entities
People
- C. P. Morath
- D. E. Sidor
- D. Leonhardt
- G. R. Savich
- J. F. Klem
- J. K. Kim
- Manish Jain
- S. D. Hawkins
- V. M. Cowan
- Xunsheng Du
Organizations
- University of Rochester