Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends
Abstract
Metal oxide (MO) semiconductors have attracted considerable attention for next-generation electronic devices because of their high carrier mobilities, even in the amorphous state, and good environmental stability. [15] Equally important, the high optical transparency of MO semiconductors can enable fully transparent thin-film transistors (TFTs), which are essential for the fabrication of invisible circuits and to increase the aperture ratio of active-matrix organic light-emitting diode (AMOLED) and liquid-crystal (LC) displays. [ 6 10 ] Therefore, since the first report of a fully transparent MO-based TFT in 2003, [13] extensive academic and industrial efforts have focused on enhancing device performance for both opaque and transparent applications. [11,12] Nevertheless, the best performing MO TFTs are typically fabricated by capital-intensive physical and chemical vapor deposition processes. Thus, a key issue for inexpensive large-scale roll-to-roll production is to enable MO TFT manufacturing with solution-based process methodologies. Another key feature of amorphous MO semiconductors is tolerance to mechanical stress, a requirement for device fabrication and utilization on flexible substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 25, 2015
- Accession Number
- ADA625232
Entities
People
- Donald B. Buchholz
- Fengyuan Shi
- Junsheng Yu
- Li Zeng
- Nanjia Zhou
- Peijun Guo
- Qianli Ma
- Robert P. Chang
- Vinayak P. Dravid
- Xinge Yu
Organizations
- Northwestern University