Effect of Defects on III-V MWIR nBn Detector Performance
Abstract
Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2014
- Accession Number
- ADA625367
Entities
People
- C. P. Morath
- D. E. Sidor
- David A. Cardimona
- Edward W. Taylor
- G. R. Savich
- G. W. Wicks
- V. M. Cowan
- Xunsheng Du
Organizations
- University of Rochester