Growth And Characterization Studies Of Advanced Infrared Heterostructures
Abstract
The goal of this project was to investigate band structure engineering in infared detectors based on Type II superlattice detectors (T2SLs). The origin of high dark current levels in the InAs/In(Ga)Sb T2SL infrared photodetectors was to be investigated. The presence of Shockley-Read-Hall centers degrade the minority carrier lifetime and have been identified as one of the major reasons for the high dark current of T2SL material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 2015
- Accession Number
- ADA625921
Entities
People
- Sanjay Krishna
Organizations
- University of New Mexico