Growth And Characterization Studies Of Advanced Infrared Heterostructures

Abstract

The goal of this project was to investigate band structure engineering in infared detectors based on Type II superlattice detectors (T2SLs). The origin of high dark current levels in the InAs/In(Ga)Sb T2SL infrared photodetectors was to be investigated. The presence of Shockley-Read-Hall centers degrade the minority carrier lifetime and have been identified as one of the major reasons for the high dark current of T2SL material.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 2015
Accession Number
ADA625921

Entities

People

  • Sanjay Krishna

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Band Structures
  • Conduction Bands
  • Current Density
  • Detection
  • Detectors
  • Energy Bands
  • Energy Levels
  • Engineering
  • Focal Plane Arrays
  • Heterojunctions
  • Infrared Detectors
  • Materials
  • Photodetectors
  • Quantum Wells
  • Spacecraft

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Sensor Fusion and Tracking Systems.