An Extended Defect as a Sensor for Free Carrier Diffusion in a Semiconductor

Abstract

We use confocal photoluminescence microscopy to study carrier diffusion near an isolated extended defect (ED) in GaAs. We observe that the carrier diffusion length varies nonmonotonically with carrier density, which we attribute to competition between point defects and the extended defect. High density laser illumination induces a permanent change in the structure of the extended defect, more significantly an apparent change in the effective polarity of the defect, and thus a drastic change in its range of influence. The inferred switch of principal diffusing species leads to a potential design consideration for high injection optoelectronic devices.

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Document Details

Document Type
Technical Report
Publication Date
Jan 11, 2013
Accession Number
ADA626148

Entities

People

  • M. W. Wanlass
  • T. H. Gfroerer
  • Yong Zhang

Organizations

  • University of North Carolina at Charlotte

Tags

Communities of Interest

  • Biomedical
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Abstracts
  • Detectors
  • Diffusion
  • Diffusion Coefficient
  • Electrons
  • Energy Bands
  • High Density
  • Lasers
  • Materials
  • Microscopes
  • Microscopy
  • Mobility
  • Optoelectronic Devices
  • Physics
  • Point Defects
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • AI & ML
  • AI & ML - Bayesian Inference
  • Directed Energy
  • Microelectronics