International Symposium on the Growth of III-Nitrides (ISGN), May 18-22, 2014, Atlanta GA

Abstract

The International Symposium on the Growth of III-Nitrides (ISGN) series of conferences have been premier international forums for experts from academia, industry, and national laboratories to present their latest progress and exchange ideas in the fundamental and applied aspects of III-N bulk and epitaxial growth technologies as well as related device advances. III-N compound semiconductor materials underlie many of today's most advanced high-performance devices such as LEDs, laser diodes, and transistors, which are becoming an essential part of the solution of many global problems. In the future, III-N solar cells, nanostructure materials, and other innovative devices will play a similar significant role in improving the human condition.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 2015
Accession Number
ADA626702

Entities

People

  • Fernando Agustín Ponce
  • Russell D. Dupuis

Organizations

  • Materials Research Society

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Agreements
  • Compound Semiconductors
  • Crystal Growth
  • Department Of Defense
  • Epitaxial Growth
  • High Pressure
  • Korea
  • Laser Diodes
  • Lasers
  • Materials
  • Mathematics
  • Military Research
  • North Carolina
  • Semiconductors
  • Solar Cells
  • Students

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Nanocomposite Materials Science
  • Neurotoxicology

Technology Areas

  • Directed Energy
  • Microelectronics