Infrared Emitters and Photodetectors with InAsSb Bulk Active Region

Abstract

Bulk unrelaxed InAsSb alloys with Sb compositions up to 44% and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T=13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T=80 and 150K suggested large absorption coefficient and carrier lifetimes sufficient for the development of long wave infrared photodetectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 29, 2013
Accession Number
ADA626787

Entities

People

  • Ding Wang
  • Dmitry Donetsky
  • G. Kipshidze
  • Gregory Belenky
  • Harry Hier
  • L. Shterengas
  • Stefan P. Svensson
  • Wendy L. Sarney
  • Youxi Lin

Organizations

  • State University of New York

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Crystal Lattices
  • Detection
  • Detectors
  • Efficiency
  • Electron Diffraction
  • Electron Microscopy
  • Energy Bands
  • Energy Gaps
  • Infrared Radiation
  • Long-Wavelength Infrared Radiation
  • Low Temperature
  • Materials
  • Measurement
  • Metal Contacts
  • Optics
  • Quantum Efficiency

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing