High Speed Laser with > 100 Ghz Resonance Frequency

Abstract

Directly modulated semiconductor lasers are the most compact optoelectronic sources for analog (microwave) as well as digital photonic systems. The bandwidth of semiconductor lasers has been limited by relaxation oscillation frequency to < 40 GHz. By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement experimentally in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q (optical quality factor) is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser's DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 2014
Accession Number
ADA627139

Entities

People

  • Connie Chang-hasnain
  • Ming C. Wu

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bandwidth
  • Couplings
  • Distributed Feedback Lasers
  • Feedback
  • Figure Of Merit
  • Frequency
  • Frequency Response
  • Lasers
  • Microwaves
  • Modulation
  • Optical Properties
  • Q Factor
  • Quantum Cascade Lasers
  • Resonance
  • Semiconductor Lasers
  • Semiconductors
  • Surface Emitting Lasers

Fields of Study

  • Materials science
  • Physics

Readers

  • Electronics Engineering
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Microelectronics