InAs1-xSbx Alloys with Native Llattice Parameters Grown on Compositionally Graded Buffers: Structural and Optical Properties

Abstract

GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-xSbx epitaxial alloys with strain-free native lattice constants up to 2.1% larger than that of GaSb. The in-plane lattice constant of the strained to buffer layer was grown to be equal to the native, unstrained lattice constant of InAs1-xSbx with given x. The InAs0.56As0.44 layers demonstrated a photoluminescence (PL) peak at 9.4 um at T=150K. The minority carrier lifetime measured at 77K for InAs0.8Sb0.2 was 250 ns.

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Document Details

Document Type
Technical Report
Publication Date
Aug 15, 2013
Accession Number
ADA627462

Entities

People

  • Ding Wang
  • Dmitry Donetsky
  • G. Kipshidze
  • Gregory Belenky
  • L. Shterengas
  • Stefan P. Svensson
  • Wendy L. Sarney
  • Youxi Lin

Organizations

  • State University of New York

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Band Gaps
  • Continuous Waves
  • Crystal Lattices
  • Electronics
  • Energy Bands
  • Epitaxial Growth
  • Heterojunctions
  • Lasers
  • Materials
  • Measurement
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Wells
  • Semiconductors
  • Surface Roughness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology