Two-Dimensional MoS2 Transistors for Low- Power RF Applications
Abstract
The proposed STTR Phase I project objectives were to demonstrate the feasibility of high-frequency (HF) field-effect transistors (FETs) using novel 2-dimensional (2D) MoS2 semiconductor. Key components of the projects were: 1. Demonstrate large-area growth of mono and multi-layer MoS2 layers using chemical vapor deposition methods with great uniformity and reproducibility. 2. Fabricate large-periphery radio-frequency field effect transistors which will employ conventional fabrication methods using contact or projection lithography for high throughput device manufacturing. 3. Engineer source/drain contacts, gate dielectrics and develop novel concepts of layer engineering for high frequency operation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 16, 2015
- Accession Number
- ADA628472
Entities
People
- Abhishek Motayed
- Baomei Wen
- Ratan Debnath