Evaluation of Transport Effects on the Performance of a Laser-Controlled GaAs Switch
Abstract
The attempt to use bulk, semiconductor-based photoconductive devices as compact switches in demanding pulsed power applications has been limited by breakdown phenomena variously described as "thermal runaway," "surface flashover," and "lock-on," all forms of nonohmic conduction. We present a summary of experimental observations related to optically induced non-ohmic current-voltage characteristics in semi-insulating semiconductors and integrate these observations into a revised power scaling criteria for bulk photoconductive semiconductor switches. We pursue an argument that unifies these observations with the physical mechanisms of charge-transport in the bulk and contact related phenomena at the device boundaries.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1991
- Accession Number
- ADA633542
Entities
People
- D. C. Stoudt
- M. S. Mazzola
- R. A. Roush
- S. F. Griffiths
Organizations
- Naval Surface Warfare Center