Material-Dependent Electric Field Enhancement of Photoconductivity in Gallium Arsenide
Abstract
Pulsed laser measurements on as-grown and thermally processed gallium arsenide show a material dependent photoconductivity. The pulsed voltage measurements on as-grown material provide evidence of a gain mechanism. An understanding of the photocurrent gain on the nature of the bulk gallium arsenide may be useful in explaining the lock-on phenomenon and in designing high power GaAs photoconductive devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1989
- Accession Number
- ADA634887
Entities
People
- G. C. Vezzoli
- M. Weiner
- T. Burke
Organizations
- United States Army Communications-Electronics Command