Model Development for Graphene Spintronics

Abstract

The goal is to develop charge and spin carrier scattering models and device models, and to explore the physics that enable and limit the operation of graphene spin valves. The models are based on the low energy linear dispersion relation of the graphene band structure near the dirac point. Scattering was evaluated in born approximation. Screening and transport were treated semi-classically.

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Document Details

Document Type
Technical Report
Publication Date
Sep 21, 2015
Accession Number
ADA635511

Entities

People

  • Darryl L. Smith
  • P. P. Ruden

Organizations

  • University of Minnesota

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Born Approximations
  • Charge Carriers
  • Dispersion Relations
  • Electric Fields
  • Electron Density
  • Electron Energy
  • Electrons
  • Fermi Levels
  • Field Effect Transistors
  • Graphene
  • Nuclear Properties
  • Quantum Properties
  • Scattering
  • Scattering Cross Sections
  • Spin-Orbit Interaction
  • Spintronics

Fields of Study

  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene