The Role of Deep Level Traps in the Optically Controlled Semi-Insulating GaAs Switch

Abstract

A numerical solution for the transient photoconductivity in the laser-activated bulk semi-insulating GaAs switch has been obtained, in which the influence of EL2 and other traps on the optical generation rates and the recombination rates of free carriers has been determined. Calculated photocurrent pulses are compared with the experimental results of switching measurements under conditions of low laser intensity and low device electric field. The comparison shows that the EL2 model is sufficient to explain the large extrinsic photoconductivity which is observed. The dependence of the recovery on the various traps is discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1987
Accession Number
ADA635564

Entities

People

  • L. Bovino
  • M. Weiner
  • R. Youmans
  • T. Burke

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Circuits
  • Computers
  • Electric Fields
  • Electron Mobility
  • Energy Bands
  • Energy Levels
  • Equations
  • Free Electrons
  • Materials
  • Measurement
  • Mobility
  • Optical Switching
  • Resistance
  • Switches
  • Waveforms

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics