Recent Advances in Optically Controlled Bulk Semiconductor Switches

Abstract

The ERADCOM Optically Activated Switch (OAS) Program has as its goal the development of a family of optically controlled bulk semiconductor power switches capable of operating over a wide range of specifications. Various combinations of switch material and optical emitter have been tested. The best overall success has been achieved by coupling GaAs or Cr:GaAs switches to a Q-switched Nd:YAG laser or to high power laser diode arrays. The laser diodes provide for high repetition rates while the Nd:YAG laser provides sufficient optical energy to switch megawatt pulses. Results obtained with both configurations, as well as OAS design considerations, are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1985
Accession Number
ADA635767

Entities

People

  • Jennifer Carter
  • L. Bovino
  • M. Weiner
  • R. Youmans
  • T. Burke

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bulk Semiconductors
  • Computers
  • Electric Fields
  • Electronics
  • Electronics Laboratories
  • Electrons
  • High Voltage
  • Laser Diodes
  • Laser Pulses
  • Lasers
  • Materials
  • Pulsed Power
  • Repetition Rate
  • Semiconductors
  • Space Charge
  • Waveforms
  • Yag Lasers

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Microelectromechanical Systems