Evaluation of SiC GTOs for Pulse Power Switching

Abstract

Certain applications require devices that can switch high peak current with fast rise times and narrow pulse width. This work was done as an initial study to investigate the performance of Silicon Carbide (SiC) Gate turn-off thyristor (GTO) in these applications. The SiC GTOs were designed for high turn-off gain and not optimized for pulse applications. The GTOs were tested as discharge switches in a low inductance circuit delivering 2 microsecond pulses with a maximum switching current of 1.4 kA (94.6 kA/cm2) and a current rise time of 2.4 kA/ s. All the devices were switched until failure. The failure modes will be discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2003
Accession Number
ADA635977

Entities

People

  • D. Ibitayo
  • Stephen Bayne

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Current Density
  • Electron Microscopes
  • Electronics
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Inductance
  • Materials
  • Power Electronics
  • Pulsed Power
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Switches
  • Switching
  • Thyristors

Fields of Study

  • Physics

Readers

  • Electrical Engineering