Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy

Abstract

The research objective was to conduct experimental work in molecular beam epitaxial growth of GaSb/GaAs and InSb/GaAs quantum dots (QDs) are conducted and compared with conventional InAs/GaAs QDs on (001) Ge substrates and on (001) GaAs substrates for comparison.

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Document Details

Document Type
Technical Report
Publication Date
Feb 04, 2016
Accession Number
ADA636863

Entities

People

  • Somsak Panyakeow

Organizations

  • Chulalongkorn University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Crystal Growth
  • Crystals
  • Detection
  • Detectors
  • Engineering
  • Epitaxial Growth
  • Infrared Detection
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nanoelectronics
  • Optical Properties
  • Quantum Dots
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing