Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

Abstract

We have investigated the surface plasmon enhancement of the GeSn p-i-n photodiode using gold metal nanostructures. We have conducted numerical simulation of the plasmonic structure of 2D nano-hole array to tune the surface plasmon resonance into the absorption range of the GeSn active layer. Such a structure is fabricated using FIB on a previously made photodiode for feasibility demonstration. The result indicates that the photocurrent of the diode can indeed be enhanced with the plasmonic structure on top. Within the time span of this project, we have completed one iteration of the process that includes design, fabrication, and characterization. There is room to improve and future optimization of the design and fabrication should yield more improvement.

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Document Details

Document Type
Technical Report
Publication Date
May 16, 2016
Accession Number
ADA636864

Entities

People

  • Greg Sun

Organizations

  • University of Massachusetts Dartmouth

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Chemical Vapor Deposition
  • Detection
  • Detectors
  • Films
  • Materials
  • Materials Processing
  • Materials Science
  • Nanostructures
  • Optical Properties
  • Optics
  • Photodetectors
  • Semiconductors
  • Surface Plasmon Resonance
  • Surface Plasmons
  • Thin Films
  • Two Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics