Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET
Abstract
A half cycle study of plasma enhanced atomic layer deposited (PEALD) Al2O3 on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H2O precursor. The remote O2 plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al2O3 growth on AlGaN/GaN devices. In addition, unpublished work on AlN films are grown on AlGaN/GaN using PEALD is presented. An AlON interfacial layer is detected at the initial stage, and the interfacial layer may result in a high interface state density. The further optimization of PEALD AlN, especially at the initial stage is necessary in order to passivate the AlGaN/GaN HETMs using the PEALD AlN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 04, 2016
- Accession Number
- ADA636905
Entities
People
- Robert M Wallace
Organizations
- University of Texas at Dallas