Solid-State Power Switches for HPM Modulators

Abstract

Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (~100-200 nsec) risetimes. This paper will review an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Two very different thyristor switches, an ABB HCT and ann-type MCT, were investigated in a fast (~136 nsec), low-impedance 1.4 micro(sec) PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switched a bias of 3840V with a risetime of 524 nsec. The N-MCT was faster, switching a bias of 944V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1995
Accession Number
ADA637110

Entities

People

  • G. Ayres
  • Harpreet Singh
  • J. F. Agee
  • L. E. Kingsley
  • R. Burdalski
  • R. Pastore

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electronics
  • High Power Microwaves
  • High Voltage
  • Impedance
  • Inductance
  • Military Research
  • Modulators
  • New Jersey
  • Rectifiers
  • Repetition Rate
  • Resistance
  • Semiconductor Devices
  • Switching
  • Test And Evaluation
  • Thyratrons
  • Thyristors
  • Voltage

Fields of Study

  • Physics

Readers

  • Electrical Engineering