Demonstration of a Frequency-Agile RF Source Configuration Using Bistable Optically Controlled Semiconductor Switches (BOSS)
Abstract
The processes of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse (lambda=l.06 micro(m)) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser (lambda=2.13 micro(m)). The opening phase requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation ( -1-MeV). Neutron-irradiated BOSS devices have been opened against a rising average electric field of about 36 kV/cm (18 kV) in a time less than one nanosecond while operating at a repetition rate, within a two-pulse burst, of about 1 Ghz. The ability to modify the frequency content of the electrical pulses, by varying the time separation, is demonstrated. Results demonstrating the operation of BOSS devices in a frequency-agile RF source configuration are also discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1995
- Accession Number
- ADA637187
Entities
People
- David C. Stoudt
- Michael A. Richardson
- Stuart L. Moran
Organizations
- Naval Surface Warfare Center