Direct Measurement of Doping Density and Barrier Lowering Effect with Bias in Quantum Wells

Abstract

An experimental method for determining the doping density in thin-sheet semiconductor material such as quantum wells (QWs) is demonstrated in GaAs/AIGaAs multiquantum-well infrared photodetectors. The results agree very well with the conventional Hall measurement method. Barrier lowering effect with bias in QWs is determined experimentally.

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Document Details

Document Type
Technical Report
Publication Date
Feb 16, 1995
Accession Number
ADA637270

Entities

People

  • A. Shakouri
  • A. Yariv
  • S. Dejewski
  • T. Krabach
  • Yan Xu

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Detectors
  • Electronics
  • Electronics Laboratories
  • Fermi Levels
  • Heterojunctions
  • Jet Propulsion
  • Lasers
  • Long Wavelengths
  • Materials
  • Measurement
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing