Atomic Oxygen (AO) and Nitrogen (AN) In-situ Flux Sensor

Abstract

Molecular beam epitaxy (MBE) of oxides and nitrides has emerged in the past two decades as an important application of the powerful MBE synthesis approach, with its ability to achieve controlled layer-by-layer growth on the atomic level. In the case of oxides and nitrides, one problem has been the lack of actively controlled in-situ sources of atomic oxygen and nitrogen suitable for MBE application. (Full Report attached)

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Document Details

Document Type
Technical Report
Publication Date
Mar 10, 2016
Accession Number
ADA637439

Entities

People

  • Malcolm Beasley

Organizations

  • Stanford University

Tags

Communities of Interest

  • Sensors

DTIC Thesaurus Topics

  • Abstracts
  • Acquisition
  • Air Force
  • Air Force Research Laboratories
  • Atomic Beams
  • Data Acquisition
  • Department Of Defense
  • Detectors
  • Diagrams
  • Information Operations
  • Instructions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nitrogen
  • Oxides
  • Oxygen
  • Tungsten Oxides

Readers

  • Distributed Systems and Data Platform Development
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology