Subnanosecond High-Power Performance of a Bistable Optically Controlled GaAs Switch
Abstract
Recent subnanosecond-opening results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The processes of persistent photoconductivity followed by photoquenching have been demonstrated in copper-compensated, silicon-doped, semi-insulating (GaAs:Si:Cu). These processes allow a switch to be developed that can be closed by the application of one laser pulse (Iambda= 1.06 pm) and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. The opening phase is a two-step process which relies initially on the absorption of the 2.13-(mu)m laser and finally on the recombination of electrons in the conduction band with holes in the valence band. The second step requires a sufficient concentration of recombination centers in the material for this process to occur in the subnanosecond regime. This report discusses the effects of 1-MeV neutron irradiation on the BOSS material for the purpose of recombination center generation. Initial experiments indicated a reduction of the recombination time from several nanoseconds down to about 180 ps. Both experimental and theoretical results are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1993
- Accession Number
- ADA637490
Entities
People
- David C. Stoudt
- Fred J. Zutavern
- Guillermo M. Loubriel
- Michael Mazzola
- Ralf Peter Brinkmann
- Randy A. Roush
Organizations
- Naval Surface Warfare Center