Fabrication and Characterization of 6H-SiC Switching Devices
Abstract
Various 6H-SiC switches, including Schottky diodes, p +n diodes and thyristors have been fabricated and characterized using optical and electrical triggering. Mesa etching is accomplished by electron cyclotron resonant reactive ion etching using CF4 and 02 mixture, with a high etch rate of 80 nm/min and an excellent surface morphology. The optical triggering by 266 nm laser light yields a near 100% switching efficiency in Pt and Au 6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1x106 V/cm is obtained in p+n diode. Operation of sic thyristor is demonstrated. A relatively long turn-on time of 170 ns is believed to be due to a long base region and a short carrier lifetime in 6H-Sic.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1993
- Accession Number
- ADA637766
Entities
People
- Harpreet Singh
- J. Flemish
- J. H. Zhao
- Kan Xie
- L. Kingsley
- M. Weiner
- T. Burke
- W. Buchwald
Organizations
- United States Army Research Laboratory