Fabrication and Design Issues of Bulk Photoconductive Switches Used for Ultra-Wideband, High-Power Microwave Generation
Abstract
The Army Research Laboratory (ARL), in collaboration with the Air Force Phillips Laboratory, has been developing the fabrication process for lateral topology, highpower photoconductive semiconductor switches (PCSS) used in phased-array, ultra-wideband (UWB) sources. This work presents issues associated with the development of these switches. First-generation devices (1.0 cm gap spacing) have been shown to achieve sub-nanosecond risetimes, working hold-off voltages of 50 kV, switched currents of 333 A into a 75 omega load, and lifetimes in excess of 2 x 1000000 shots at 10 HZ Later-generation devices (0.25 gap spacing) operate at 20 kV and 1 kHz, with improved risetimes, jitter characteristics, and trigger requirements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1997
- Accession Number
- ADA638213
Entities
People
- A. Balekdjian
- J. Conrad
- J. S. Schoenberg
- J. S. Tyo
- J. W. Burger
- M. C. Skipper
- M. D. Abdalla
- S. M. Ahern
- W. R. Buchwald
Organizations
- United States Army Research Laboratory