Optically Activated Switch Using High Power Laser Diode Arrays
Abstract
Because of their high PRF capability and compact size gallium arsenide laser diodes offer distinct advantages as the light source in optically activated switches. In this paper various targets were investigated using a 500 watt laser diode array as the optical source. The targets included silicon, and gallium arsenide. Switch characteristics (recovery, gap resistance, risetime) were obtained as a function of optical energy, optical pulsewidth, and gap length. Bias voltages up to 6 kV were employed. Trade-offs in performance are discussed for the various targets.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1983
- Accession Number
- ADA638296
Entities
People
- Jennifer Carter
- L. Bovino
- M. Weiner
- R. Youmans
- T. Burke
Organizations
- United States Army Communications-Electronics Command