Ultrafast High Power Switching Diodes
Abstract
Impressive progress in semiconductor switch technology has been demonstrated at the A I. Ioffe Physiotechnical Institute in St. Petersburg, Russia, by Grekhov, Kardo-Sysoev and colleagues. In general, the Ioffe group's technology demonstrates faster switching at higher voltages and peak powers (from the moderate current, sub-nanosecond time scale to the microsecond time scale at multiple kilo Ampere currents) than existing commercial devices. In the moderate voltage (1 KV), moderate current (100 A) regime, the Ioffe group's technology demonstrates switching times of 2 ns or a di/dt of 5 x 10 to the 10th power A/s. In the thyristor area, large diameter devices have demonstrated rates of current rise approaching 10 to the 12th power A/s, which is comparable with spark gaps. In addition, the ultrafast (50 ps), high voltage (15 KV) pulse rise times demonstrated by Grekhov and colleagues surpasses the switching speed produced by nonlinear GaAs switches in the United States.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1995
- Accession Number
- ADA638412
Entities
People
- C. B. Fleddermann
- Edl Schamiloglu
- Jonathan Gaudet
- R. J. Focia
- W. C. Nunnally
Organizations
- University of New Mexico